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HOTTECH
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2SA1162 Datasheet Preview

2SA1162 Datasheet

PNP Transistor

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2SA1162 pdf
FEATURES
Low noise : NF= 1dB(Typ.),10dB (Max.)
Complementary to 2SC2712.
Small Package.
Plastic-Encapsulate Transistors
2SA1162(PNP)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-50
VCEO
-50
VEBO
-5
IC -150
PC 150
TJ 125
Tstg -55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO IC=-100u A,IE=0
Collector-emitter breakdown voltage
VCEO IC=-1mA,IB=0
Emitter-base breakdown voltage
VEBO IE=-100 u A,IC=0
Collector cut-off current
ICBO VCB=-50V,IE=0
Emitter cut-off current
IEBO VEB=-5V,IC=0
DC current gain
hFE VCE=-6V,IC=-2mA
Collector-emitter saturation voltage
VCE(sat) IC=-100mA,IB=-10mA
Transition frequency
fT VCE=-10V,IC=-1mA
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
Noise figure
NF VCE=-6V,Ic=0.1mA,
f=1KHZ,Rg=10KΩ
Rank
Range
SO
70-140
SY
120-240
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
-50 V
-50 V
-5 V
-0.1 u A
-0.1 u A
70 400
-0.3 V
80 MHz
7 pF
10 dB
SG
200-400
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1



HOTTECH
HOTTECH

2SA1162 Datasheet Preview

2SA1162 Datasheet

PNP Transistor

No Preview Available !

2SA1162 pdf
2SA1162 Typical Characteristics
Plastic-Encapsulate Transistors
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P2


Part Number 2SA1162
Description PNP Transistor
Maker HOTTECH
Total Page 2 Pages
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