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BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS

2SA1162 Datasheet Preview

2SA1162 Datasheet

Silicon PNP transistor

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2SA1162 pdf
2SA1162
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.

特征 / Features
电压和集电极直流电流大,极好的放大线性,高放大,噪声系数低,与 2SC2712 互补。
High voltage and current, excellent hFE linearity, high hFE, low noise, complementary to 2SC2712.

用途 / Applications
用于普通音频放大。
Audio frequency general purpose amplifier applications.

内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1Emitter
PIN 2Base PIN 3Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
O
70140
Y
120240
Marking
HSO
HSY
GR
200400
HSG
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BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS

2SA1162 Datasheet Preview

2SA1162 Datasheet

Silicon PNP transistor

No Preview Available !

2SA1162 pdf
2SA1162
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
-50
-50
-5.0
-150
-30
150
150
-55150
单位
Unit
V
V
V
mA
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
符号
Symbol
测试条件
Test Conditions
ICBO VCB=-50V IE=0
IEBO VEB=-5.0V Ic=0
hFE VCE=-6.0V IC=-2.0mA
VCE(sat) IC=-100mA IB=-2.0mA
fT VCE=-10V IE=-1.0mA
Cob
VCB=-10V
f=1.0MHz
IE=0
NF
VCE=-6.0V Rg=10K
IC=-0.1mA f=1.0KHz
最小值 典型值 最大值 单位
Min Typ Max Unit
-0.1 μA
-0.1 μA
70 400
-0.1 -0.3 V
80 MHz
4.0 7.0 pF
1.0 10 dB
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Part Number 2SA1162
Description Silicon PNP transistor
Maker BLUE ROCKET ELECTRONICS
Total Page 6 Pages
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