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Toshiba Electronic Components Datasheet

2SA1160 Datasheet

Silicon PNP Epitaxial Type Transistor

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2SA1160 pdf
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications
Medium Power Amplifier Applications
2SA1160
Unit: mm
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed (Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
20
10
6
2
4
2
900
150
55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2011-01-18


Toshiba Electronic Components Datasheet

2SA1160 Datasheet

Silicon PNP Epitaxial Type Transistor

No Preview Available !

2SA1160 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −20 V, IE = 0
IEBO
VEB = −6 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
V (BR) EBO IE = −1 mA, IC = 0
hFE (1)
(Note 3)
VCE = −1 V, IC = −0.5 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = −1 V, IC = −4 A
IC = −2 A, IB = −50 mA
VCE = −1 V, IC = −2 A
VCE = −1 V, IC = −0.5 A
VCB = −10 V, IE = 0, f = 1 MHz
Note 3: hFE (1) Classification A: 140 to 280, B: 200 to 400, C: 300 to 600
Marking
2SA1160
Min Typ. Max Unit
⎯ ⎯ −100 nA
⎯ ⎯ −100 nA
10
V
6 ⎯ ⎯
V
140 600
60 120
⎯ −0.20 0.50 V
⎯ −0.83 1.5
V
140 MHz
50 pF
A1160
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2011-01-18


Part Number 2SA1160
Description Silicon PNP Epitaxial Type Transistor
Maker Toshiba Semiconductor
Total Page 4 Pages
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