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G2309 Datasheet Preview

G2309 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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G2309 pdf
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Pb Free Plating Product
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
G2309
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
75m
-3.7A
Description
The G2309 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The G2309 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-30
20
-3.7
-3.0
12
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4




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GTM

G2309 Datasheet Preview

G2309 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

G2309 pdf
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-30
-
-1.0
-
-
-
-0.02
-
5.0
-
-
-
-3.0
-
100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-3A
nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 75 m VGS=-10V, ID=-3A
- 120
VGS=-4.5V, ID=-2.6A
58
ID=-3A
1 - nC VDS=-24V
3-
VGS=-4.5V
8-
VDS=-15V
5-
ID=-1A
20
-
ns VGS=-10V
RG=3.3
7-
RD=15
412 660
91 -
62 -
VGS=0V
pF VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
20
15
Max.
-1.2
-
-
Unit Test Conditions
V IS=-1.2A, VGS=0V
ns IS=-3A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270 /W when mounted on min. copper pad.
2/4




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G2309 Datasheet Preview

G2309 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

G2309 pdf
Characteristics Curve
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4




Part Number G2309
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
Total Page 4 Pages
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