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G2304A Datasheet Preview

G2304A Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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G2304A pdf
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Pb Free Plating Product
ISSUED DATE :2005/03/21
REVISED DATE :
G2304A
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
117m
2.5A
Description
The G2304A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The G2304A is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
30
20
2.5
2
10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4



GTM
GTM

G2304A Datasheet Preview

G2304A Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

G2304A pdf
ISSUED DATE :2005/03/21
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.1
- V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 2 - S VDS=10V, ID=2.5A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 10 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 117 m VGS=10V, ID=2.5A
- 190
VGS=4.5V, ID=2.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 3 5
ID=2.5A
Qgs - 0.8 - nC VDS=24V
Qgd - 1.8 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
5
-
VDS=15V
Tr
Td(off)
-
-
9
11
-
-
ID=1A
ns VGS=10V
RG=3.3
Tf - 2 -
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 120 190
VGS=0V
- 62 - pF VDS=25V
- 24 -
f=1.0MHz
Gate Resistance
Rg - 1.67 -
f=1.0MHz
Source-Drain Diode
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
VSD - - 1.2 V IS=1.2A, VGS=0V
Trr - 24 - ns IS=2A, VGS=0V
Qrr - 23 - nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270
/W when mounted on min. copper pad.
2/4


Part Number G2304A
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
Total Page 4 Pages
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