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G2305A Datasheet Preview

G2305A Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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G2305A pdf
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Pb Free Plating Product
ISSUED DATE :2005/03/21
REVISED DATE :
G2305A
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
80m
-3.2A
Description
The G2305A provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The G2305A is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-30
12
-3.2
-2.6
-10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4



GTM
GTM

G2305A Datasheet Preview

G2305A Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

G2305A pdf
ISSUED DATE :2005/03/21
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
-0.1
-
V/ Reference to 25 , ID=-1mA
Gate Threshold Voltage
VGS(th) -0.5 - -1.2 V VDS=VGS, ID=-250uA
Forward Transconductance
gfs - 9 - S VDS=-5V, ID=-3A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
- - 60
VGS=-10V, ID=-3.2A
Static Drain-Source On-Resistance RDS(ON)
-
-
- 80 m VGS=-4.5V, ID=-3.0A
- 150
VGS=-2.5V, ID=-2.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
- - 250
VGS=-1.8V, ID=-1.0A
- 10 18
ID=-3.2A
- 1.8 - nC VDS=-24V
- 3.6 -
VGS=-4.5V
-7-
VDS=-15V
- 15 -
ID=-3.2A
ns VGS=-10V
- 21 -
RG=3.3
- 15 -
RD=4.6
- 735 1325
VGS=0V
- 100 -
pF VDS=-25V
- 80 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
24
19
Max.
-1.2
-
-
Unit Test Conditions
V IS=-1.2A, VGS=0V
ns IS=-3.2A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on min. copper pad.
2/4


Part Number G2305A
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
Total Page 4 Pages
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