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G2306 Datasheet Preview

G2306 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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G2306 pdf
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Pb Free Plating Product
CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
G2306
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
32m
5.3A
Description
The G2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial applications.
Features
Capable of 2.5V gate drive
Lower on-resistance
Reliable and Rugged
Applications
Power Management in Notebook Computer
Portable Equipment
Battery Powered System.
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
20
12
5.3
4.3
10
1.38
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Ratings
90
Unit
/W
1/4



GTM
GTM

G2306 Datasheet Preview

G2306 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

G2306 pdf
CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Symbol
BVDSS
BVDSS/ Tj
VGS(th)
gfs
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IGSS
IDSS
Static Drain-Source On-Resistance
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Unless otherwise specified)
Min.
Typ.
Max.
Unit
Test Conditions
20 -
-
V VGS=0, ID=250uA
- 0.1 - V/ Reference to 25 , ID=1mA
0.5 - 1.2
V VDS= VGS, ID=250uA
- 13 -
S VDS=5.0V, ID=5.3A
- - 100 nA VGS= 12V
- - 1 uA VDS=20V, VGS=0
- - 10 uA VDS=16V, VGS=0
- - 30
ID=5.5A, VGS=10V
- - 35 m ID=5.3A, VGS=4.5V
- - 50
ID=2.6A, VGS=2.5V
- - 90
ID=1.0A, VGS=1.8V
- 8.7 -
ID=5.3A
- 1.5 -
nC VDS=10V
- 3.6 -
VGS=4.5V
-6-
- 14 -
- 18.4 -
- 2.8 -
VDS=15V
ID=1A
ns VGS=10V
RG=2
RD=15
- 603 -
- 144 -
- 111 -
VGS=0V
pF VDS=15V
f=1.0MHz
Source-Drain Diode
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VSD
-
- 1.2
V IS=1.2A, VGS=0 Tj=25
Trr
- 16.8 -
ns IS=5.0A,VGS=0
Qrr
- 11 -
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270 /w when mounted on min. copper pad.
Characteristics Curve
2/4


Part Number G2306
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
Total Page 4 Pages
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