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Fairchild Semiconductor Electronic Components Datasheet

RFP14N05 Datasheet

14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs

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RFP14N05 pdf
RFD14N05, RFD14N05SM, RFP14N05
Data Sheet
January 2002
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09770.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD14N05
RFD1 4N05SM
R F P 14N0 5
TO-251AA
TO-252AA
TO-220AB
D14N05
D14N05
RFP14N05
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A.
Features
• 14A, 50V
• rDS(ON) = 0.100
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFD14N05, RFD14N05SM, RFP14N05 Rev. B1


Fairchild Semiconductor Electronic Components Datasheet

RFP14N05 Datasheet

14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP14N05 pdf
RFD14N05, RFD14N05SM, RFP14N05
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate above 25o C
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFD14N05, RFD14N05SM,
RFP14N05
50
50
± 20
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress on ly rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T J = 25o C to 150oC .
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS ID = 250µA, VGS = 0V (Figure 9)
VGS(TH) VGS = VDS, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS , VG S = 0V
VDS = 0.8 x Rated BV DSS, VGS = 0V, T C = 150oC
Gate to Source Leakage Current
IGSS VGS = ±20V
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
rDS(ON)
tO N
td(ON)
tr
ID = 14A, VGS = 10V, (Figure 11)
VDD = 25V, ID 14A, VGS = 10V,
RG S = 25Ω, RL = 1.7
(Figure 13)
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Qg(TOT)
Qg(10)
Qg(TH)
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 40V, ID = 14A,
RL = 2.86
Ig(REF) = 0.4mA
(Figure 13)
Input Capacitance
Output Capacitance
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
R θJA
R θJA
TO-251 and TO-252
TO-220
MIN
50
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
14
26
45
17
-
-
-
-
570
185
50
-
-
-
MAX
-
4
25
250
±100
0.100
60
-
-
-
-
100
40
25
1.5
-
-
-
3.125
100
80
UNITS
V
V
µA
µA
nA
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 14A
- - 1.5 V
Diode Reverse Recovery Time
trr ISD = 14A, dISD/dt = 100A/µs
- - 125 ns
NOTES:
2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2002 Fairchild Semiconductor Corporation
RFD14N05, RFD14N05SM, RFP14N05 Rev. B1


Part Number RFP14N05
Description 14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs
Maker Fairchild Semiconductor
Total Page 8 Pages
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