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Intersil Electronic Components Datasheet

RFP14N06L Datasheet

14A/ 60V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs

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RFP14N06L pdf
RFD14N06L, RFD14N06LSM, RFP14N06L
Data Sheet
July 1999 File Number 4088.3
14A, 60V, 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD14N06L
TO-251AA
14N06L
RFD14N06LSM
TO-252AA
14N06L
RFP14N06L
TO-220AB
FP14N06L
NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-252AA variant in tape and reel, i.e. RFD14N06LSM9A.
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 14A, 60V
• rDS(ON) = 0.100
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP14N06L Datasheet

14A/ 60V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs

No Preview Available !

RFP14N06L pdf
RFD14N06L, RFD14N06LSM, RFP14N06LS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFD14N06L, RFD14N06LSM,
RFP14N06LS
60
60
±10
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
ID = 250µA, VGS = 0V, Figure 13
VGS = VDS, ID = 250µA, Figure 12
VDS = 48V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±10V
ID = 14A, VGS = 5V
VDD = 30V, ID = 7A,
RL = 4.28, VGS = 5V,
RGS = 0.6
Figures 10, 18, 19
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 48V,
ID = 14A,
RL = 3.43
Figures 20, 21
VDS = 25V, VGS = 0V,
f = 1MHz
Figure 14
TO-251 and TO-252
TO-220
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 14A
ISD = 14A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
60 -
-
V
1-2
V
- - 1 µA
- - 50 µA
- - 100 nA
-
- 0.100
- - 60 ns
- 13 -
ns
- 24 -
ns
- 42 -
ns
- 16 -
ns
- - 100 ns
- - 40 nC
- - 25 nC
- - 1.5 nC
- 670 -
pF
- 185 -
pF
- 50 -
pF
-
-
3.125
oC/W
- - 100 oC/W
- - 80 oC/W
MIN TYP MAX UNITS
- - 1.5 V
- - 125 ns
6-2


Part Number RFP14N06L
Description 14A/ 60V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 8 Pages
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RFP14N06L pdf






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