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Intersil Electronic Components Datasheet

RFP14N06 Datasheet

14A/ 60V/ 0.100 Ohm/ N-Channel Power MOSFET

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RFP14N06 pdf
Data Sheet
RFP14N06
July 1999 File Number 4002.3
14A, 60V, 0.100 Ohm, N-Channel Power
MOSFET
This N-Channel power MOSFET is manufactured using the
MegaFET process. This process which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance. It
was designed for use in applications such as switching
regulators, switching convertors, motor drivers, and relay
drivers. This transistor can be operated directly from
integrated circuits.
Formerly developmental type TA09770.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP14N06
TO-220AB
RFP14N06
NOTE: When ordering, use the entire part number.
Features
• 14A, 60V
• rDS(ON) = 0.100
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-492
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP14N06 Datasheet

14A/ 60V/ 0.100 Ohm/ N-Channel Power MOSFET

No Preview Available !

RFP14N06 pdf
RFP14N06
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor Above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFP14N06
60
60
±20
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(10)
Qg(TH)
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA, (Figure 10)
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC
VGS = ±20V
ID = 14A, VGS = 10V, (Figure 9)
VDD =30V, ID = 7A, RL = 4.3,
VGS = 10V, RGS = 25
(Figure 13)
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 48V, ID = 14A,
RL = 3.42Ω,
IG(REF) = 0.4mA
(Figure 13)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
TO-220AB
MIN
60
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
--
V
-4
V
- 1 µA
- 25 µA
- ±100 nA
- 0.100
- 60 ns
14 -
ns
26 -
ns
45 -
ns
17 -
ns
- 100 ns
- 40 nC
- 25 nC
- 1.5 nC
570 -
pF
185 -
pF
50 -
pF
- 3.125 oC/W
- 62 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
VSD ISD = 14A
-
- 1.5
V
Diode Reverse Recovery Time
trr ISD = 14A, dISD/dt = 100A/µs
- - 125 ns
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-493


Part Number RFP14N06
Description 14A/ 60V/ 0.100 Ohm/ N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 8 Pages
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