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AL5802 Datasheet

ADJUSTABLE CURRENT SINK LINEAR LED DRIVER

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AL5802 pdf
AL5802
30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER
Description
The AL5802 combines a high gain NPN transistor with a pre-
biased NPN transistor to make a simple small footprint LED
driver.
The LED current is set by an external resistor connected to
from REXT pin (6) to GND pin (4), the internal high gain
transistor develops approximately 0.6V across the external
resistor.
The AL5802 open-collector output can operate from 0.8V to
30V enabling it to operate from 5V to 24V power supplies
without additional components.
PWM dimming of the LED current can be achieved by either
driving the BIAS pin (2) with a low impedance voltage
source, or driving the EN pin (3) with an external open-
collector NPN transistor or open-drain N-channel MOSFET.
The AL5802 is available in a SOT26 package and is ideal for
driving 20mA to 120mA LED currents.
Pin Assignments
(Top View)
654
Q1
Q2
123
SOT26
Features
Reference voltage VRSET = 0.65V
-40 to 125ºC temperature range
0.8V to 30V open-collector output
Negative temperature co-efficient – automatically reduce the LED
current at high temperatures
Low thermal impedance SOT26 with copper leadframe
SOT26: Available in “Green” Molding Compound (No Br, Sb)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Linear LED driver
LED signs
Offline LED luminaries
Typical Application Circuit
AL5802
Document number: DS35516 Rev.4 - 2
1 of 11
www.diodes.com
November 2011
© Diodes Incorporated



Diodes Semiconductor Electronic Components Datasheet

AL5802 Datasheet

ADJUSTABLE CURRENT SINK LINEAR LED DRIVER

No Preview Available !

AL5802 pdf
AL5802
30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER
Pin Descriptions
Pin
Number
1
2
3
4
5
6
Name
OUT
BIAS
EN
GND
FB
REXT
Function
Open-collector LED driver output
Biases the open collector output transistor
Enable pin for PWM dimming. Provides access to the base of Q2 and
collector of Q1
Ground reference point for setting LED current
Feedback pin.
Should be connected to pin 6.
Current sense pin. LED current sensing resistor should be connected
from here to GND.
Functional Block Diagram
Absolute Maximum Ratings
Fig. 1 Block Diagram
Symbol
Characteristics
Values
Unit
VOUT
VBIAS
VFB
VEN
VREXT
IOUT
TJ
TST
Output voltage relative to GND
BIAS voltage relative to GND (Note 1)
LED voltage relative to GND
EN voltage relative to GND
REXT voltage relative to GND
Output current
Operating junction temperature
Storage temperature
30
30
6
6
6
150
-40 to 150
-55 to 150
V
V
V
V
V
mA
°C
°C
These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure.
Operation at the absolute maximum rating for extended periods may reduce device reliability.
Notes: 1.With pins 5 and 6 connected together.
AL5802
Document number: DS35516 Rev.4 - 2
2 of 11
www.diodes.com
November 2011
© Diodes Incorporated



Diodes Semiconductor Electronic Components Datasheet

AL5802 Datasheet

ADJUSTABLE CURRENT SINK LINEAR LED DRIVER

No Preview Available !

AL5802 pdf
AL5802
30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER
Package Thermal Data
Characteristic
Power Dissipation (Note 2) @ TA = 25°C
Power Dissipation (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 2) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Symbol
PD
RθJA
Notes:
2.Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout.
3.Device mounted on 25mm x 25mm 2oz copper board.
4.Device mounted on 50mm x 50mm 2oz copper board.
Value
0.37
0.87
1
335
143
120
Unit
W
°C/W
Recommended Operating Conditions
Symbol
Parameter
VBIAS
VOUT
ILED
TA
Supply voltage range
OUT voltage range
LED pin current (Note 5)
Operating ambient temperature range
Notes:
5.Subject to ambient temperature, power dissipation and PCB.
Min Max Unit
4.5 30
0.8 30
V
10 120 mA
-40 125
°C
Electrical Characteristics
NPN Transistor – Q1 @TA = 25°C unless otherwise specified
Symbol
Characteristic
V(BR)CEO Collector-Emitter Breakdown Voltage (Note 6)
V(BR)EBO Emitter-Base Breakdown Voltage
ICEX Collector Cutoff Current
IBL Base Cutoff Current
hFE DC Current Gain
VCE(SAT) Collector-Emitter Saturation Voltage
VBE(SAT) Base-Emitter Saturation Voltage
Test Condition
IC = 1.0mA, IB = 0
IE = 10µA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 10mA, IB = 1.0mA
NPN Pre-biased Transistor – Q2 @TA = 25°C unless otherwise specified
Symbol
Characteristic
Test Condition
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)CEO Collector-Emitter Breakdown Voltage (Note 6)
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO Collector Cut-Off Current
IEBO Emitter Cut-Off Current
VCE(SAT) Collector-Emitter Saturation Voltage (Note 6)
hFE DC Current Gain (Note 6)
R1 Input Resistance
*Characteristics of transistor only.
IC = 50μA, IE = 0
IC = 1mA, IB = 0
IE = 50µA, IC = 0
VCB = 30V, IE = 0
VEB = 4V, IC = 0
IC = 10mA, IB = 1mA
VCE = 5V, IC = 150mA
Notes:
6. Measured under pulsed condition. Pulse width = 300µs. Duty cycle 2%.
Min Typ Max Unit
40 V
6.0 V
50 nA
50 nA
40
70
100 300
0.20 V
0.65 0.85 V
Min Typ Max Unit
30 V
30 V
5.0 V
0.5 µA
0.5 µA
0.3 V
100
7 10 13 kΩ
AL5802
Document number: DS35516 Rev.4 - 2
3 of 11
www.diodes.com
November 2011
© Diodes Incorporated




Part Number AL5802
Description ADJUSTABLE CURRENT SINK LINEAR LED DRIVER
Maker Diodes
Total Page 11 Pages
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