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Diodes Semiconductor Electronic Components Datasheet

AL5802LP-7 Datasheet

LED DRIVER

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AL5802LP-7 pdf
AL5802LP-7
LED DRIVER, 30V, LINEAR, ADJUSTABLE, CURRENT SINK
Description
The AL5802LP combines a high gain NPN transistor with a pre-
biased NPN transistor to make a simple, small footprint LED driver.
Pin Assignments
The LED current is set by an external resistor connected from
REXT pin (2) to GND pin (3), and the internal high gain transistor
develops approximately 0.6V across the external resistor.
The AL5802LP open-collector output can operate from 0.8V to 30V
enabling it to operate from 5V to 24V power supplies without
additional components.
PWM dimming of the LED current can be achieved by either driving
the BIAS pin (6) with a low impedance voltage source, or driving the
EN pin (4) with an external open-collector NPN transistor or
open-drain N-Channel MOSFET.
The AL5802LP is available in a U-DFN1616 Type F package and is
ideal for driving 10mA to 120mA LED currents.
Internal Schematic
(Top View)
(Bottom View)
Package: U-DFN1616-6
The collector of Q2 is connected to pin 1 and pad 7
which is on the underside of the package
Pad 8 is electrically tied to the collector of Q1 and to
the base of Q2, i.e. it is common with terminal 4
Features
Reference Voltage VRSET = 0.65V
-40 to +125°C Operating Temperature Range
0.8V to 30V Open-Collector Output
Negative Temperature Coefficient Automatically reduces the
LED current at high temperatures
Low Thermal Impedance, Small Footprint DFN1616 Package
with Exposed Pads
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN1616-6
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94-V-0.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.005 grams (Approximate)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Typical Application Circuit
SBR is a registered trademark of Diodes Incorporated
AL5802LP-7
Document number: DS37549 Rev. 3 - 2
1 of 10
www.diodes.com
May 2015
© Diodes Incorporated



Diodes Semiconductor Electronic Components Datasheet

AL5802LP-7 Datasheet

LED DRIVER

No Preview Available !

AL5802LP-7 pdf
Pin Descriptions
Pin Number
1
2
3
4
5
6
Name
OUT
REXT
GND
EN
N/C
BIAS
Function
Open-Collector LED Driver Output
Current Sense Pin
LED current sensing resistor should be connected from here to GND
Ground Reference Point for Setting LED Current
Enable Pin for PWM Dimming
Provides access to the base of Q2 and the collector of Q1
No Connection
Biases the Open Collector Output Transistor
Functional Block Diagram
AL5802LP-7
Figure 1 Block Diagram
Absolute Maximum Ratings
Symbol
VOUT
VBIAS
VFB
VEN
VREXT
IOUT
TOP
TSTG
Characteristics
Output Voltage Relative to GND
BIAS Voltage Relative to GND
LED Voltage Relative to GND
EN Voltage Relative to GND
REXT Voltage Relative to GND
Output Current
Operating Temperature
Storage Temperature
Values
30
30
6
6
6
150
-40 to +150
-55 to +150
Unit
V
V
V
V
V
mA
°C
°C
These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for extended
periods of time may reduce device reliability.
SBR is a registered trademark of Diodes Incorporated
AL5802LP-7
Document number: DS37549 Rev. 3 - 2
2 of 10
www.diodes.com
May 2015
© Diodes Incorporated



Diodes Semiconductor Electronic Components Datasheet

AL5802LP-7 Datasheet

LED DRIVER

No Preview Available !

AL5802LP-7 pdf
AL5802LP-7
Package Thermal Data
Characteristic
Power Dissipation (Note 4) @ TA = +25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = +25°C
Recommended Operating Conditions
Symbol
VBIAS
VOUT
ILED
TA
Parameter
Supply Voltage Range
OUT Voltage Range
LED Pin Current (Note 5)
Operating Ambient Temperature Range
Symbol
PD
RθJA
Value
0.50
250
Unit
W
°C/W
Min Max Unit
4.5 30
0.8 30
V
10 120 mA
-40 +125
°C
Electrical Characteristics NPN Transistor Q1 (@TA = +25°C, unless otherwise specified.)
Symbol
V(BR)CEO
V(BR)EBO
ICEX
IBL
Characteristic
Collector-Emitter Breakdown Voltage (Notes 6 & 7)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current (Note 7)
Base Cut-Off Current (Note 7 )
hFE DC Current Gain
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Test Condition
IC = 1.0mA, IB = 0
IE = 10µA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 10mA, IB = 1.0mA
VCE = 1.50V, IC = 2.0mA
Min
40
6.0
40
70
100
0.65
0.30
Typ
Max
50
50
300
0.20
0.85
1.10
Unit
V
V
nA
nA
V
V
V
Electrical Characteristics NPN Pre-biased Transistor Q2 (@TA = +25°C, unless otherwise specified.)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
VBE(ON)
hFE
R1
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage (Note 7)
Collector Cut-Off Current
Emitter Cut-Off Current (Note 7)
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage
DC Current Gain (Note 6)
Input Resistance
Test Condition
IC = 50μA, IE = 0
IC = 1mA, IB = 0
IE = 50μA, IC = 0
VCB = 30V, IE = 0
VEB = 4V, IC = 0
IC = 10mA, IB = 1mA
VCE = 5.0V, IC = 2.0mA
VCE = 5V, IC = 150mA
Min Typ Max
30 — —
30 — —
5.0 — —
— — 0.5
— — 0.5
— — 0.3
0.30 1.10
100
7 10 13
Note:
4. Device mounted on FR-4 PCB, single-sided, 2oz copper trace weight with minimum recommended pad layout.
5. Subject to ambient temperature, power dissipation and PCB substrate material selection.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to
the testability of the device changed after packaging multiple dies to form an application circuit.
Unit
V
V
V
µA
µA
V
V
kΩ
SBR is a registered trademark of Diodes Incorporated
AL5802LP-7
Document number: DS37549 Rev. 3 - 2
3 of 10
www.diodes.com
May 2015
© Diodes Incorporated




Part Number AL5802LP-7
Description LED DRIVER
Maker Diodes
Total Page 10 Pages
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