SSF7509 Main Product Characteristics: VDSS RDS(on) ID 75V 6.5mohm(typ.) 80A TO220 Marking and pin Assignment Schematic diagram Features and Benefits:

SSF6014 www.DataSheet4U.com Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c

Main Product Characteristics: VDSS RDS(on) 75V 6mΩ (typ.) ID 100A TO-220 Features and Benefits:  Advanced MOSFET process technology  Special d

SSFD3004 DESCRIPTION The SSFD3004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use a

                                 Main Product Characteristics: VDSS 30V RDS(on) 3.8mΩ (typ.) ID 90A TO-252 (D-PAK)  Features and Benefits: „ Ad

SSF1090 Feathers:  Advanced trench process technology  Special designed for Convertors and power controls  High density cell design for ultra low

Main Product Characteristics: VDSS 30V RDS(on) 3.6mΩ(Typ.) ID 90A TO-252 (DPAK) Features and Benefits:  Advanced MOSFET process technology  S

Main Product Characteristics: VDSS 60V RDS(on) ID 16mΩ (typ.) 22A Features and Benefits: DFN3.3x3.3 Bottom view  Advanced trench MOSFET proces

Main Product Characteristics: VDSS 60V RDS(on) 5.8mΩ (typ.) ID 80A TO-263 (D2PAK) Features and Benefits:  Advanced MOSFET process technology 

Main Product Characteristics: VDSS 30V RDS(on) 4.2mΩ(Typ.) ID 100A TO-252 (DPAK) Features and Benefits:  Advanced MOSFET process technology 

Main Product Characteristics: VDSS -40V RDS(on) 24mohm(typ.) ID -30A Features and Benefits: TO-252  Advanced MOSFET process technology  Specia

Main Product Characteristics: VDSS RDS(on) 60V 14mΩ (typ.) ID 40A Features and Benefits: PQFN 5x6  Advanced MOSFET process technology  Special

Main Product Characteristics: VDSS 40V RDS(on) 6.9mΩ (typ.) ID 68A PDFN 3*3-8L Main Features  Advanced MOSFET process technology  Special des

Main Product Characteristics: VDSS 68V RDS(on) 5.3mΩ(Typ.) ID 80A TO-252 (DPAK) Features and Benefits:  Advanced MOSFET process technology  S

SSF2305 DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low

SSF6010 www.DataSheet4U.com Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c

SSF8N65 Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge min

DESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a Battery

Main Product Characteristics: VDSS -20V RDS(on) 126mΩ (typ.) ID -2A SOT-23 Features and Benefits:  Advanced MOSFET process technology  Specia

Main Product Characteristics: VDSS RDS(on) ID -30V 22mΩ (typ.) -6A ① SOT23-3 Features and Benefits:  Advanced MOSFET process technology  Special