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SSF8N65
Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
Description The SSF8N65 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
Application ■ High current, high speed switching ■ Ideal for off-line power supply, adaptor, PFC
VDSS = 650V ID = 8A Rdson = 0.95Ω (typ.
SSF8N65 Datasheet
