SSF8205A - low gate charge and operation

Datasheet Summary

Description

The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.65V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 20V,ID = 6A RDS(ON) < 37.5mΩ @ VGS=2.5V RDS(ON) < 27.5mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D1 S1 S1 G1 Schematic diagram 4 3 2 1 5 6 7 8 D2 S2 S2 G2 8205A Marking and pin Assignment.

Silikron

📥 Download Datasheet

Datasheet Details

Part number	SSF8205A
Manufacturer	Silikron
File Size	427.41 KB
Description	low gate charge and operation
Datasheet	SSF8205A Datasheet
Additional preview pages of the SSF8205A datasheet.

📁 Similar Datasheet

SSF8205A - 20V N-Channel MOSFET (GOOD-ARK)
SSF8205 - 20V Dual N-Channel MOSFET (GOOD-ARK)
SSF80N06A - Advanced Power MOSFET (Samsung Electronics)
SSF84W - P-Channel MOSFET (VBsemi)
SSF84W - P-Channel MOSFET (SeCoS)
SSF8970 - 80V N-Channel MOSFET (GOOD-ARK)
SSF8N60 - 600V N-Channel MOSFET (GOOD-ARK)
SSF8N80 - 800V N-Channel MOSFET (GOOD-ARK)
SSF8N80A - Advanced Power MOSFET (Samsung Electronics)
SSF8N80ZF - MOSFET (Silikron Semiconductor)

Other Datasheets by Silikron

SSF8205 - MOSFET
SSF8205U - MOSFET
SSF8205UH2 - MOSFET
SSF8205VA - MOSFET
SSF8233EJ4 - MOSFET
SSF80100 - MOSFET
SSF8421 - MOSFET
SSF8509 - MOSFET

Full PDF Text Transcription

Click to expand full text

SSF8205A DESCRIPTION The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. G1 D1 D2 G2 S1 S2 GENERAL FEATURES ● VDS = 20V,ID = 6A RDS(ON) < 37.5mΩ @ VGS=2.5V RDS(ON) < 27.5mΩ @ VGS=4.

Published: Sep 7, 2014 |