C4821 - 2SC4821
· 4 Hits · High gain bandwidth product (fT=2.0GHz). · Large current capacity (IC=500mA) · Usage of radial taping to meet automatic mounting. Package Dimension...C4837 - 2SC4837
· 4 Hits · Adoption of FBET and MBIT processes. · Large allowable collector dissipation. · Low saturation voltage. · Wide ASO and large current capacity. · Usa...C4851 - 2SC4851
· 4 Hits · Very small-sized package permitting 2SC4851applied sets to be made smaller and slimer. · Small output capacitance. · Low collector-to-emitter satura...C4860 - 2SC4860
· 4 Hits · High cutoff frequency : fT=6.5GHz typ. · High gain : S21e2=11.5dB typ (f=1GHz). · Small Cob : NF=0.65pF typ. 0.425 Package Dimensions unit:mm 20...C4863 - 2SC4863
· 4 Hits · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=11dB typ (f=1GHz). · High cutoff frequency : fT=7.0GHz typ. 0.425 Package Dimensions unit...C4884 - 2SC4884
· 4 Hits · Adoption of MBIT process. · Large allowable collector dissipation. · High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic (...2SC4826 - NPN TRANSISTOR
· 3 Hits • • • • • Adoption of FBET process. High fT : fT=300MHz(typ). High breakdown voltage : VCEO=200V. Small reverse transfer capacitance and excellent h...2SC4861 - NPN Epitaxial Planar Silicon Transistor
· 3 Hits · High cutoff frequency : fT=6.5GHz typ. · High gain : S21e2=11.5dB typ (f=1GHz). · Small Cob : NF=0.65pF typ. Package Dimensions unit:mm 2018B [...2SC4884 - NPN TRANSISTOR
· 3 Hits · Adoption of MBIT process. · Large allowable collector dissipation. · High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic (...C4824 - 2SC4824
· 3 Hits · Adoption of FBET process. · High Gain Bandwidth product (fT=400MHz). · High breakdown voltage (VCEO=120V). · Small reverse transfer capacitance and ...C4836 - 2SC4836
· 3 Hits · Large allowable collector dissipation. · Low saturation voltage. · Large current capacity. · Fast switching speed. · Usage of radial taping to meet ...C4855 - 2SC4855
· 3 Hits · Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7.5dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Package Dimensions unit:m...C4861 - 2SC4861
· 3 Hits · High cutoff frequency : fT=6.5GHz typ. · High gain : S21e2=11.5dB typ (f=1GHz). · Small Cob : NF=0.65pF typ. Package Dimensions unit:mm 2018B [...C4864 - 2SC4864
· 3 Hits · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=11dB typ (f=1GHz). · High cutoff frequency : fT=7.0GHz typ. Package Dimensions unit:mm 20...C4865 - 2SC4865
· 3 Hits · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12.5dB typ (f=1GHz). · High cutoff frequency : fT=7.0GHz typ. Package Dimensions unit:mm 2...C4869 - 2SC4869
· 3 Hits · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=15dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 211...2SC4821 - NPN TRANSISTOR
· 2 Hits · High gain bandwidth product (fT=2.0GHz). · Large current capacity (IC=500mA) · Usage of radial taping to meet automatic mounting. Package Dimension...2SC4837 - PNP/NPN Epitaxial Planar Silicon Transistors
· 2 Hits · Adoption of FBET and MBIT processes. · Large allowable collector dissipation. · Low saturation voltage. · Wide ASO and large current capacity. · Usa...2SC4851 - NPN Epitaxial Planar Silicon Transistor
· 2 Hits · Very small-sized package permitting 2SC4851applied sets to be made smaller and slimer. · Small output capacitance. · Low collector-to-emitter satura...2SC4852 - NPN Epitaxial Planar Silicon Transistor
· 2 Hits · Small-sized package permitting 2SC4852-applied sets to be made smaller and slimer. · Small output capacitance. · Low collector-to-emitter saturation...