Renesas Technology HAT Datasheet | Pinout, Features, Price Comparison & PDF

HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0067-0100Z Rev.1.00 Aug.29.2003 www.DataSheet4U.com Features • •

HAT1048R Silicon P Channel Power MOS FET Power Switching ADE-208-1223A (Z) 2nd. Edition Jan. 2001 Features www.DataSheet4U.com • Capable of -4.5 V g

www.DataSheet4U.com HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.5

HAT1035R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive • Low drive current • H

HAT1054R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current •

HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0067-0100Z Rev.1.00 Aug.29.2003 www.DataSheet4U.com Features • •

HAT2205C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High de

HAT2279H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High den

HAT1091C Silicon P Channel MOS FET Power Switching REJ03G1229-0400 Rev.4.00 Jun. 13, 2005 Features • Low on-resistance RDS(on) = 134 mΩ typ. (at VGS

www.DataSheet4U.com HAT2217C Silicon N Channel MOS FET Power Switching REJ03G0449-0300 Rev.3.00 May 19.2005 Features • Low on-resistance RDS(on) = 1

HAT2282C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V) • Low drive current • High dens

www.DataSheet4U.com HAT2114R, HAT2114RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G0120-0100Z (Previous ADE-208-1544(Z)) Rev.1.

www.DataSheet4U.com HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0500 Rev.5.00 May 10, 2007 Features • Low on-resistance RDS(on) =

HAT1094C Silicon P Channel MOS FET Power Switching REJ03G1231-0400 Rev.4.00 Feb 28, 2006 Features • Low on-resistance RDS(on) = 67 mΩ typ. (at VGS =

HAT2080R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESA

HAT2080T Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESA

HAT2201R Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-re

www.DataSheet4U.com HAT2218R Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0396-0300 Rev.3.00 Aug.23.2

HAT2173H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 8 V gate drive • Low drive current • High densi

HAT2129H Silicon N Channel Power MOS FET Power Switching Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-re