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HAT1072H
Silicon P Channel Power MOS FET Power Switching
Features
• Capable of –4.5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS (on) = 3.6 mΩ typ (at VGS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 4 G
1 234
REJ03G1155-0700 (Previous: ADE-208-1534E)
Rev.7.00 Sep 07, 2005
5 D
SSS 123
1, 2, 3 4 5
Source Gate Drain
Rev.7.00 Sep 07, 2005 page 1 of 6
HAT1072H
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
HAT1072H Datasheet
