MACOM CGH Datasheet | Pinout, Features, Price Comparison & PDF

CGHV35120F 120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Description The CGHV35120F is a gallium nitride (GaN) high electron mobility

CGH40120F 120 W, RF Power GaN HEMT Description The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4

CGH31240F 240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Description The CGH31240F is a gallium nitride (GaN) high

CGHV50200F 200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT Description The CGHV50200F is a gallium nitride (GaN) high electron mobility tr

CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Description The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)

CGH40180PP 180 W, RF Power GaN HEMT Description The CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG

CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT Description The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) whi

CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Description The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). T

CGH40025 25 W, RF Power GaN HEMT Description The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4002

CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT Description The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Description The CGHV14500 is a gallium nitride (GaN) high electron mobility transis

CGHV40180P 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HE

CGH40006P 6 W, RF Power GaN HEMT Description The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400

CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT Description The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

CGH40006S 6 W, RF Power GaN HEMT, Plastic Description The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). T

CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HPA Description The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output p

CGHV40200PP 200 W, 50 V, GaN HEMT Description The CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH

CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) d