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5 Hits
CAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0...
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c) Diode Capacitance (V R = 0, f = 1.0 MHz) Reverse Recovery Time (I F = I R = 30mAdc, R L = 100 Ω) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 ...
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4 Hits
bove 25°C Forward Current(DC) Junction Temperature Storage Temperature Range
Thermal Resistance Junction-to-Ambient
Symbol VR PF
IF TJ T stg R θ JA
...
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z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site...
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Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Uniqu...
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4 Hits
Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Uniqu...
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ƽ Small plastic SMD package. ƽ For high-speed switching applications. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S...
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4 Hits
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site a...
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3 Hits
CAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0...
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3 Hits
1)Extremely Fast Switching Speed 2) Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc 3)We declare that the material of product compliant with Ro...
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3 Hits
1)Extremely Fast Switching Speed 2) Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc 3)We declare that the material of product compliant with Ro...
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3 Hits
1)Extremely Fast Switching Speed 2) Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc 3)We declare that the material of product compliant with
Ro...
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3 Hits
1)Extremely Fast Switching Speed 2) Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc 3)We declare that the material of product compliant with
Ro...
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3 Hits
ate above 25°C Thermal Resistance Junction to Ambient
Junction Temperature Storage Temperature Range
PD
RθJA TJ T stg
200
1.57 635 125Max –55 to +15...
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CTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10 µA) Total ...
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3 Hits
dc) (V R = 75 Vdc, T J = 150°C) (V R = 25 Vdc, T J = 150°C) Reverse Breakdown Voltage (I BR = 100 µAdc) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAd...