S-LBAS316T1G High speed diode

Leshan Radio Company

S-LBAS316T1G Description

LESHAN RADIO COMPANY, LTD.High-speed diode .
The LBAS316T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323(SC76) SMD plastic package.

S-LBAS316T1G Features

* Ultra small plastic SMD package
* High switching speed: max. 4 ns
* Continuous reverse voltage: max. 75 V
* Repetitive peak reverse voltage: max. 100 V
* Repetitive peak forward current: max. 500 mA.
* We declare that the material of product compliance with RoHS requirement

S-LBAS316T1G Applications

* Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS
* High-speed switching in e. g. surface mounted circuits. LBAS316T1G S-LBAS316T1G 1 2 SOD
* 323 1 CATHODE 2 ANODE ORDERING INFORMATION Device Marking Shipping LBAS316T1G S-LBAS

📥 Download Datasheet

S-LBAS316T1G Datasheet Preview — Preview of S-LBAS316T1G PDF

Datasheet Details

Part number: S-LBAS316T1G
Manufacturer: Leshan Radio Company
File Size: 221.20 KB
Datasheet: S-LBAS316T1G-LeshanRadioCompany.pdf
Description: High speed diode

📁 Related Datasheet

S-LBAS16LT1G - Switching Diode (LRC)
S-LBAS20HT1G - High Voltage Switching Diode (LRC)
S-LBAS40BST5G - SCHOTTKY BARRIER DIODE (LRC)
S-LBC817-16LT1G - General Purpose Transistors (LRC)
S-LBC817-25LT1G - General Purpose Transistors (LRC)
S-LBC817-40LT1G - General Purpose Transistors (LRC)
S-LBSS138DW1T1G - Power MOSFET (LRC)
S-LBSS138V3.3T1G - Dual Integrated Circuit N-Channel/PN Duals (LRC)

📌 All Tags

High speed diode Leshan Radio Company

Leshan Radio Company S-LBAS316T1G-like datasheet

S-LBAS16WT1G - Switching Diode
S-LBAS516T1G - High-speed Diode
S-LBAS70-04LT1G - SCHOTTKY BARRIER DIODE
S-LBAS70-04LT3G - SCHOTTKY BARRIER DIODE
S-LBAS70-05LT1G - SCHOTTKY BARRIER DIODE
S-LBAS70-05LT3G - SCHOTTKY BARRIER DIODE