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International Rectifier
IRG7PH44K10D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
· 13 Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base...
International Rectifier
G4PH30KD - IRG4PH30KD
· 11 • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high swit...
International Rectifier
G4PC50W - IRG4PC50W
· 11 • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficie...
International Rectifier
G4PC40UD - IRG4PC40UD
· 11 • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighte...
International Rectifier
IRG4BC40WSPBF - INSULATED GATE BIPOLAR TRANSISTOR
· 11 Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve effici...
International Rectifier
IRGP4068D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
· 10 • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 1...
International Rectifier
IRGPS40B120UP - INSULATED GATE BIPOLAR TRANSISTOR
· 10 • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package...
International Rectifier
IRG4PH30KD - INSULATED GATE BIPOLAR TRANSISTOR
· 9 • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high swit...
International Rectifier
IRGSL10B60KD - INSULATED GATE BIPOLAR TRANSISTOR
· 9 • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery ...
International Rectifier
IRGBC20KD2 - INSULATED GATE BIPOLAR TRANSISTOR
· 9 • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for h...
International Rectifier
G4BC40U - IRG4BC40U
· 9 • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighte...
International Rectifier
IRGP4630-EDPbF - Insulated Gate Bipolar Transistor
· 9 G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Square RBSO...
International Rectifier
IRGB4056DPBF - INSULATED GATE BIPOLAR TRANSISTOR
· 8 • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of t...
International Rectifier
IRG4BC15UDPBF - INSULATED GATE BIPOLAR TRANSISTOR
· 8 UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Indust...
International Rectifier
IRG4PC20UPBF - UltraFast Speed IGBT
· 8 UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighte...
International Rectifier
IRGBC20KD2-S - INSULATED GATE BIPOLAR TRANSISTOR
· 8 • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for hig...
International Rectifier
IRG4PH40KD - INSULATED GATE BIPOLAR TRANSISTOR
· 7 • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high swit...
International Rectifier
IRG4BC30KD-S - INSULATED GATE BIPOLAR TRANSISTOR
· 7 • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with hig...
International Rectifier
IRG4CC50WB - IGBT Die
· 7 1kA-2kA-.2.5kA ) 99% Al, 1% Si (4 microns) 0.257" x 0.260" 150mm, with std. < 100 > flat .015" + / -.003" 01-5226 100 Microns 0.25mm Diameter Minimum...