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G4BC30FD IRG4BC30FD

G4BC30FD Description

PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

G4BC30FD Features

* C
* Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G Generation 3
* IGBT co-packaged with HEXFREDTM ultrafast, ultra-s

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IRG4BC30FD International Rectifier
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