Infineon PTF Datasheet | Pinout, Features, Price Comparison & PDF

PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for E

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PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDM

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PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-d

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(6 views)

PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Description The PTFC270101M is an unmatched 10-watt LDMOS FET su

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PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are therm

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Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET

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PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDM

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Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS

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PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f

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PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The

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PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M

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PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally

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PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for E

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Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET

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Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET

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PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for E

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PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDM

(4 views)