PTF080451 (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for E
(7 views)
PTF080101S (Infineon Technologies AG)
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
(6 views)
PTF180601C (Infineon Technologies AG)
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180601
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz
Description
The PTF180601 is a 60 W, internally matched GOLDM
(6 views)
PTFA043002E (Infineon)
Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E
Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz
Description
The PTFA043002 is a 300-watt, internally-matched, laterally-d
(6 views)
PTFC261402FC (Infineon)
Thermally-Enhanced High Power RF LDMOS FET
(6 views)
PTFC270101M (Infineon)
High Power RF LDMOS Field Effect Transistor
PTFC270101M
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Description
The PTFC270101M is an unmatched 10-watt LDMOS FET su
(6 views)
PTFB211503FL (Infineon)
Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503EL PTFB211503FL
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz
Description
The PTFB211503EL and PTFB211503FL are therm
(5 views)
PTF080101 (Infineon Technologies AG)
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
(5 views)
PTF080601F (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET
(5 views)
PTF180601E (Infineon Technologies AG)
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180601
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz
Description
The PTF180601 is a 60 W, internally matched GOLDM
(5 views)
PTF180901E (Infineon Technologies AG)
GSM/EDGE RF Power FET
Product Brief
PTF180901
GSM/EDGE RF Power FET
The PTF180901
One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS
(5 views)
PTF211301A (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301
LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz
Description
The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f
(5 views)
PTFA041501F (Infineon)
Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501E PTFA041501F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz
Description
The
(5 views)
PTFA220081M (Infineon)
High Power RF LDMOS Field Effect Transistor
PTFA220081M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz
Description
The PTFA220081M
(5 views)
PTFA241301E (Infineon)
Thermally-Enhanced High Power RF LDMOS FET
PTFA241301E PTFA241301F
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz
Description
The PTFA241301E and PTFA241301F are thermally
(5 views)
PTF080451E (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for E
(4 views)
PTF080601 (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET
(4 views)
PTF080601A (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET
(4 views)
PTF080901E (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for E
(4 views)
PTF180601 (Infineon Technologies AG)
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180601
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz
Description
The PTF180601 is a 60 W, internally matched GOLDM
(4 views)