Inchange Semiconductor 2SA Datasheet | Specifications & PDF Download

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Ty

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www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION ·High Collector-Emitter

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Li

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1516 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Good Linea

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isc Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations f

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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linear

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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A ·Fa

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isc Silicon PNP Power Transistor 2SA1040 DESCRIPTION ·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CE

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3182

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isc Silicon PNP Power Transistor 2SA1067 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area

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isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA940 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO

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isc Silicon PNP Power Transistor 2SA2121 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V

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isc Silicon PNP Power Transistor 2SA1215 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·High Power Dissipation ·Complement

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sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdo

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) ·Complement to Type 2SC3421 ·Minimum Lo

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isc Silicon PNP Power Transistor 2SA1001 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimum

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1880 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80(V)(Min.) ·Low Co

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isc Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·Wide ASO and high durability against breakdown ·Complement to Type 2SC5669 ·M

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