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2SA1065 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SC2489 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high pow

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isc Silicon PNP Power Transistor 2SA1065 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -15 A 120 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.