IRG7PH35U-EP Datasheet
IRG7PH35U-EP International Rectifier
PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) .
International Rectifier
IRG7PH35U-EP - INSULATED GATE BIPOLAR TRANSISTOR
Mar 31, 2014
·
2 Hits
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for...
International Rectifier
IRG7PH35UD-EP - INSULATED GATE BIPOLAR TRANSISTOR
Apr 25, 2011
·
1 Hits
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature...
International Rectifier
IRG7PH35UD1-EP - INSULATED GATE BIPOLAR TRANSISTOR
Apr 25, 2011
·
1 Hits
• • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% ...
International Rectifier
IRG7PH35U-EP - INSULATED GATE BIPOLAR TRANSISTOR
Mar 31, 2014
·
1 Hits
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for...
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International Rectifier
International Rectifier
International Rectifier
International Rectifier
