INCHANGE TTA Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·Low collector-emitter saturation voltage: VCE(

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0002 ·Minimum Lot-to-Lot

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0001 ·Minimum Lot-to-Lot

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isc Silicon PNP Power Transistor TTA1452 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High

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STTA6006TV1 ULTRAFAST HIGH VOLTAGE DIODE FEATURES ·Ultra-fast and soft recovery ·High frequency operations ·Very low overall power losses ·Minimum Lot

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Ultra fast Rectifier FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring

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isc Silicon PNP Power Transistor INCHANGE Semiconductor TTA1943 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Compl

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STTA9012TV2 Ultrafast High Voltage Diode FEATURES ·High surge current capability ·Wide current range ·High voltage ratings up to 1200V ·Minimum Lot-t

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Ultra fast Rectifier FEATURES ·High reverse voltage capability ·Low switching loss ·High surge current capability ·Minimum Lot-to-Lot variations for

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