FDS Datasheet | Specifications & PDF Download

UMW R General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Ba

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MOSFET – P-Channel, Logic Level, POWERTRENCH) FDS4435A General Description This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s ad

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UMW FDS3672 100V N-ChanneI MOSFET 1.Features ID=7.5A RDS(ON)=23mΩ(VGS=10V) Qg(tot) = 28nC(Typ.),VGS=10V Low Miller Charge 2.Applications DC/DC conver

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FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ Features General Description „ Max

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FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power fie

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PSOC™ Control C3 - PSC3P2xD, PSC3M3xD Datasheet Arm® Cortex® -M33 32-bit MCU+FPU+DSP, 100 MHz, up to 256 KB Flash/64 KB SRAM, Real-time Control Featu

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FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 7.5 A, 19.8 mΩ Feat

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FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features „ Max rDS(

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FDS4480 February 2002 FDS4480 40V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

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FDS4559 April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description This complementary MOSFET device is produced using Fairchild’s a

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FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -

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FDS6679 March 2005 FDS6679 30 Volt P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improv

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June 1998 FDS6680A Single N-Channel, Logic Level, PowerTrenchTM MOSFET GeneralDescription This N-Channel Logic Level MOSFET is produced using Fairchi

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www.DataSheet4U.com FDS2672 N-Channel UltraFET Trench® MOSFET August 2006 FDS2672 N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ Features „ Max

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FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using ON Sem

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FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semi

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FDS4435A October 2001 FDS4435A P-Channel Logic Level PowerTrench® MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fa

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Product Specification Sheet Photodiodes CAUTION ELECTROSTATIC SENSITIVE DEVICE DO NOT HANDLE EXCEPT WITH AN ESD WRIST STRAP AT A STATIC-FREE WORKSTA

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FDS4935 June 2001 FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Se

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MBQ40T120FDS 1200V FieldStop Trench IGBT Datasheet MBQ40T120FDS High speed FieldStop Trench IGBT General Description This IGBT is produced using adv

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