FDS Datasheet | Pinout, Features, Price Comparison & PDF

FDS6575-VB FDS6575-VB Datasheet P-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.015 at VGS = - 4.5 V - 20 0.0

FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 7.5 A, 19.8 mΩ Feat

FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ Features General Description „ Max

FDS4480 February 2002 FDS4480 40V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

Product Specification Sheet Photodiodes CAUTION ELECTROSTATIC SENSITIVE DEVICE DO NOT HANDLE EXCEPT WITH AN ESD WRIST STRAP AT A STATIC-FREE WORKSTA

FDS9926A July 2003 FDS9926A Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description These N-Channel 2.5V specified MOSFETs use Fairch

FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power fie

MOSFET – Complementary, POWERTRENCH) 60 V FDS4559 General Description This complementary MOSFET device is produced using onsemi’s advanced PowerTrenc

May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor GeneralDescription SO-8 P-Channel enhancement mode power field effect tra

FDS6675BZ P-Channel PowerTrench® MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ March 2009 tm General Description Features This

GBJ/KBJ50005 thru GBJ/KBJ5010 GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES ● Rating to 1000V PRV ● Ideal for printed circuit board ● Low forward volta

FDS6064N7 May 2003 FDS6064N7 20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t

SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 3.6 mW FDS6699S General Description The FDS6699S is designed to replace a single SO−8 MOSFET and Schott

FDS6162N7 May 2003 FDS6162N7 20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t

FDS6572A September 2001 FDS6572A 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to impro

FDS6815 July 1999 ADVANCE INFORMATION FDS6815 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified

FDS8812NZ N-Channel PowerTrench® MOSFET November 2008 FDS8812NZ N-Channel PowerTrench® MOSFET 30V, 20A, 4.0mΩ Features General Description „ Max

FDS2582 September 2002 FDS2582 N-Channel PowerTrench® MOSFET 150V, 4.1A, 66mΩ Features • r DS(ON) = 57mΩ (Typ.), VGS = 10V, ID = 4.1A • Qg(tot) = 19

FDS6692 September 2003 FDS6692 30V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improv

FDS6898AZ October 2001 FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFET