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FDS4935 - Dual 30V P-Channel PowerTrench MOSFET

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General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Applications • Power management • Load switch • Battery protection

Overview

FDS4935 June 2001 FDS4935 Dual 30V P-Channel PowerTrench MOSFET.

Key Features

  • 7 A,.
  • 30 V RDS(ON) = 23 mΩ @ VGS =.
  • 10 V RDS(ON) = 35 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge (15nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD1DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 6 Q1 7 Q2 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Ga.

📁 Similar Datasheet

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ON Semiconductor Logo FDS4935A Dual P-Channel MOSFET ON Semiconductor
ON Semiconductor Logo FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET ON Semiconductor

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