e PTB 20081 150 Watts, 470–860 MHz UHF TV Power Transistor Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 2

e PTB 20003 4 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20003 is a class AB, NPN, common emitter RF power transistor inten

e PTB 20007 30 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor inte

e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor inte

e PTB 20177 150 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN, common emitter RF power transistor int

e PTB 20179 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20179 is an NPN, common emitter RF power transistor intended for

e PTB 20080 25 Watts, 1.6–1.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF pow

e PTB 20091 30 Watts, 470–860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 V

e PTB 20097 40 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20097 is a class AB, NPN, common emitter RF power transistor inte

e PTB 20105 20 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20105 is a class AB, NPN, common emitter RF power transistor inte

e PTB 20135 85 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20135 is a class AB, NPN, common emitter RF power transistor inte

e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor inte

e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26

e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc ope

e PTB 20157 20 Watts, 1.35–1.85 GHz RF Power Transistor Description The 20157 is an NPN common base RF power transistor intended for 22–26 Vdc class C

e PTB 20004 50 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20004 is a class AB, NPN, common emitter RF power transistor inte

e PTB 20006 4 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20006 is a class AB, NPN, common emitter RF power transistor inten

e PTB 20009 2.5 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20009 is a class AB, NPN, common emitter RF power transistor int

e PTB 20011 20 Watts P-Sync, 470–860 MHz UHF TV Linear Power Transistor Description The 20011 is an NPN common emitter UHF power transistor intended f

e PTB 20017 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor int