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PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor
Description
The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
Specified 22 Volts Class C Characteristics Output Power: 8 Watts Gain: 6.0 dB Min. at 8 Watts Gold Metallization Silicon Nitride Passivated
Typical Gain & Return Loss vs. Frequency
10 8 Gain (dB)
(as measured in a broadband circuit) VCC = 22 V Pin = 2.0 W
0
Return Loss (dB)
-3 -6 -9
Gain (dB)
6 4 2 Return Loss (dB) 0 1.3 1.4 1.5 1.6 1.7 1.8 1.
PTB20156 Datasheet
