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PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor
Description
The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.
45 Watts, 1.8–2.0 GHz Class AB Characteristics 40% Collector Efficiency at 45 W Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9
Output Power (Watts)
201 51
LOT COD E
VCC = 26 V ICQ = 100 mA f = 2.
PTB20151 Datasheet
