E231 Datasheet | Specifications & PDF Download

http://www.ncepower.com Pb Free Product NCE2312A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2312A uses advanced trench technolo

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WͲŚĂŶŶĞů ŶŚĂŶĐĞŵĞŶƚDŽĚĞWŽǁĞƌDK^& d S Ϯϯϭϭ BVDSS RDS(ON) ID -60V 175mΩ -2.2A Description The 6(2311B is the highest performance trench P-ch

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NTE231 Silicon Controlled Rectifier (SCR) TV Deflection Circuit Features: D CTV 110° – CRT Horizontal Deflection D Comutater Switch Absolute Maximum R

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NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 typ

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AL4CE211 AL4CE221 AL4CE231 AL4CE241 AL4CE251 Data Sheets Version 1.0 www.DataSheet4U.com AL4CE211/AL4CE221/AL4CE231/AL4CE241/AL4CE251 Amendments 0

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NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for

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NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed f

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NTE2313 Silicon NPN Transistor High Speed Switch Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO

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NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a m

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NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with a

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NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package design

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n-channel JFETs designed for • • • • Audio and Sub-Audio Amplifiers H Performance Curves NS See Section 4 BENEFITS • Ultra Low Noise en = 8 nV/y'HZ T

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CMOS LSI No. 5486 LC66E2316 Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip EPROM Preliminary Overview The LC66E2316 is an on-chip EPROM

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http://www.ncepower.com Pb Free Product NCE2312 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2312 uses advanced trench technology

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 0.045 at VGS = - 4.5 V 0.072 at VGS = - 2.5 V ID (A) - 4.2 - 3.6 FEATURES •

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NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor

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User‘s Guide Dell E2214H Dell E2314H Model No.: E2214H / E2314H Regulatory model: E2214Hb / E2314Hf Free Datasheet http://www.datasheet4u.com/ NOTE

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WILLAS SOT-23 Plastic-Encapsulate MOSFETS SE2310 N-Channel MOSFET DESCRIPTION The SE2310 uses advanced trench technology to provide excellent RDS(ON

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design MSP430AFE253, MSP430AFE252, MSP430AFE251 MSP4

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