E231 Datasheet | Specifications & PDF Download

PE2312 Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PE2312 uses advanced trench technology to provide excellent RDS(ON), l

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n-channel JFETs designed for • • • • Audio and Sub-Audio Amplifiers H Performance Curves NS See Section 4 BENEFITS • Ultra Low Noise en = 8 nV/y'HZ T

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NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a m

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P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using

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User‘s Guide Dell E2214H Dell E2314H Model No.: E2214H / E2314H Regulatory model: E2214Hb / E2314Hf Free Datasheet http://www.datasheet4u.com/ NOTE

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PE2319 P-Channel Enhancement Mode Power MOSFET Description The PE2319 uses advanced trench technology to provide excellent RDS(ON) and low gate charg

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CMOS LSI No. 5486 LC66E2316 Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip EPROM Preliminary Overview The LC66E2316 is an on-chip EPROM

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PE2317 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2317 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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N-Channel 20-V (D-S) MOSFET DTE2312 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.056 at VGS = 10 V 0.059 at VGS = 4.5 V 0.064 at VGS =

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P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 0.045 at VGS = - 4.5 V 0.072 at VGS = - 2.5 V ID (A) - 4.2 - 3.6 FEATURES •

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NTE2316 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2317 is an NPN transistor in a monolithic Darlington configuration

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NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with a

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N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using

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www.DataSheet4U.com CLE230,CLE231,CLE232,CLE233 High Power Aluminum Gallium Arsenide IREDs 0.210 (5.33) 0.190 (4.83) 1.00 (25.4) min. ® Clairex Feb

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www.DataSheet4U.com www.fairchildsemi.com KE Series Encased Amplifiers Features I I I I I General Description The KE Series amplifiers are designed

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WͲŚĂŶŶĞů ŶŚĂŶĐĞŵĞŶƚDŽĚĞWŽǁĞƌDK^& d S Ϯϯϭϭ BVDSS RDS(ON) ID -60V 175mΩ -2.2A Description The 6(2311B is the highest performance trench P-ch

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design MSP430AFE253, MSP430AFE252, MSP430AFE251 MSP4

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GigaDevice Semiconductor Inc. GD32E231CxT6 ARM® Cortex®-M23 32-bit MCU Datasheet GD32E231CxT6 Datasheet Table of Contents Table of Contents

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GigaDevice Semiconductor Inc. GD32E231CxT6 ARM® Cortex®-M23 32-bit MCU Datasheet GD32E231CxT6 Datasheet Table of Contents Table of Contents

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GigaDevice Semiconductor Inc. GD32E231CxT6 ARM® Cortex®-M23 32-bit MCU Datasheet GD32E231CxT6 Datasheet Table of Contents Table of Contents

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