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SE2311B - P-Channel MOSFET

Description

The 6(2311B is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1,2 Total Power Dissipation3 Linear Derating Factor VDS VGS ID @TA=25℃ ID @TA=70℃ IDM @TA=25℃ PD @TA=25℃ - Operating Junction and Storage Temperature Range TJ, TSTG Thermal Data Parameter Thermal Resistance Junction-ambient1 Symbol RθJA Rati.

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Datasheet Details

Part number SE2311B
Manufacturer WILLAS
File Size 582.18 KB
Description P-Channel MOSFET
Datasheet download datasheet SE2311B Datasheet
Additional preview pages of the SE2311B datasheet.

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Full PDF Text Transcription

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WͲŚĂŶŶĞůŶŚĂŶĐĞŵĞŶƚDŽĚĞWŽǁĞƌDK^&d SϮϯϭϭ BVDSS RDS(ON) ID -60V 175mΩ -2.2A Description The 6(2311B is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The 6(2311B meet the RoHS and Green Product requirement with full function reliability approved.
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