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NTE2311 - Silicon NPN Transistor

Description

The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications.

Features

  • D High Blocking Capability: VCEX = 1000V D Wide Surge Area: ICSM = 55A @ 350V.

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Datasheet Details

Part number NTE2311
Manufacturer NTE Electronics (defunct)
File Size 24.48 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE2311 Datasheet

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Full PDF Text Transcription

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NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V D Wide Surge Area: ICSM = 55A @ 350V Applications: D Switchmode Power Supply D DC/DC and DC/AC Converters D Motor Control Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector–Emitter Voltage (VBE = –2.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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