NCE2025I-VB NCE2025I-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) （mΩ） 7 at VGS = 10 V 30 9 at VGS= 4

NCE2025S-VB NCE2025S-VB Datasheet N-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0049 at VGS = 4.5 V 20 0.0056

PE2023 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2023 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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PRELIMINARY W541E20X 4-BIT FLASH EPROM MICROCONTROLLER GENERAL DESCRIPTION The W541E20X is fully compatible with W741E20X in terms of pin assignment a

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TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010

TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010

PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for

ACE2020M N-Channel 200-V MOSFET Description ACE2020M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for

DTE20 Series DC-DC Converter 20 Watts xxx Series• Fully Encapsulated Chassis Mount • Wide 4:1 Input Range • -40 °C to +95 °C Operating Temperature •

DTE20 Series DC-DC Converter 20 Watts xxx Series• Fully Encapsulated Chassis Mount • Wide 4:1 Input Range • -40 °C to +95 °C Operating Temperature •

TLE202x-EP, TLE202xA-EP EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SGLS235D− FEBRUARY 2004 − REVISED SEPTEMBER 2010 D Controlled

ISSUED DATE :2005/09/05 REVISED DATE : GE2026 NPN EPITAXIAL PLANAR TRANSISTOR Description The GE2026 is designed for general purpose application.

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