DIODES DMN Datasheet | Specifications & PDF Download

AADDVVAANNCCEEDDI INFNFOORRMMAATITIOONN Product Summary BVDSS 20V RDS(ON) max 29m @ VGS = 10V 35m @ VGS = 4.5V ID max TA = +25°C 6.5A 5.4A Desc

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NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMN95H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 950V RDS(ON) 7Ω@VGS = 10V

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DMN2024UVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 24mΩ @ VGS = 4.5V 28mΩ @ VGS = 2.5V ID TA = +25°C 7A 5A Descri

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ADVANCED INFORMATION YM Product Summary V(BR)DSS 20V RDS(ON) Max 25mΩ @ VGS = 4.5V 29mΩ @ VGS = 2.5V ID Max TA = +25°C 6.8A 5.5A DMN2024U N-CHANN

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DMN2024UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V 50mΩ

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DMN2024UVTQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 24mΩ @ VGS = 4.5V 28mΩ @ VGS = 2.5V ID TA = +25°C 7A 5A Descr

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DMN2024UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 24mΩ @ VGS = 4.5V 28mΩ @ VGS = 2.5V ID Max TC = +25°C 6.2A

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DMN2024UFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) max 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V ID max Tc = +25°C 8A 7

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMN95H2D2HCTI Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 950V RDS(ON)

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DMN2024UDH DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 23mΩ @ VGS = 4.5V 27mΩ @ VGS = 2.5V ID Max TC = +25°C 5.2A

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DMN2024UFU DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 20.2mΩ @ VGS = 4.5V 23.5mΩ @ VGS = 2.5V ID Max TC = +25°C

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DMN2991UV N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V ID @TA = +25°C 0.7A 0.6A Descr

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DMN2004WKQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) max 550 mΩ @ VGS = 4.5V ID TC = +25°C 0.54 mA Description and Appl

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NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 900V RDS(ON) 7Ω@VGS = 10V

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DMN95H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 1000V RDS(ON) 7Ω@VGS = 10V ID TC = +25°C 2.5A Description This ne

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DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capaci

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NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 10.8m @ VGS = 4.5V 14.5m @ VGS = 2.5V 17.0m @ VGS = 1.8V ID max TA = +25°C 10.7A 9.3A 8.6A

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NEW PRNOEDWUCPTRODUCT DMN67D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) max 5.0Ω @ VGS = 10V 7.5Ω @ VGS = 5V ID ma

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Features • Ultra Low Profile Package • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakag

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