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6 Hits
T1G/T3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdo...
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5 Hits
● We declare that the material of product compliance with RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requir...
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5 Hits
328 -55~150
Unit
V V V mA mW °C / W °C
http://www.SeCoSGmbH.com/
19-May-2011 Rev. B
Any changes of specification will not be informed individually....
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3 Hits
* High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability
SYMB...
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3 Hits
• High Density Cell Design For Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity...
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3 Hits
and Benefits
BVDSS 60V
RDS(ON) Max
3.0Ω @ VGS = 10V 4.0Ω @ VGS = 4.5V
ID Max TA = +25°C
261mA 226mA
Description and Applications
This MOSFET is de...
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1 Hits
z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
ID
115...
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1 Hits
T1G/T3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdo...