Datasheet4U Logo Datasheet4U.com

2N7002DW - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 115 mA (VGS = 10V).
  • RDS(ON) ＜ 7.5 Ω (VGS = 5V).
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low On-Resistance MOSFET 1.S2 4.S1 2.G2 5.G1 3.D1 6.D2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage @ RGS ≤ 1MΩ Gate-Source Voltage Continuous Pulsed Continuous Continuous Drain Current Continuous @ 100°C Pulsed Power Dissipation Derating above Ta = 25°C Thermal Resistance. Junction- to-Ambient.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N7002DW DUAL N-CHANNEL MOSFET Diodes Incorporated
2N7002DW N-Channel FET ON Semiconductor
2N7002DW Dual N-channel MOSFET JCET
2N7002DW Dual N-Channel MOSFET MCC
2N7002DW Dual N-Channel MOSFET Weitron Technology

Other Datasheets by Kexin Semiconductor

Part Number Description
2N7002 N-Channel Enhancement MOSFET
2N7002E N-Channel Enhancement MOSFET
2N7002K N-channel MOSFET
2N7002T N-Channel MOSFET
2N7002TE N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Dual N-Channel MOSFET 2N7002DW ■ Features ● VDS (V) = 60V ● ID = 115 mA (VGS = 10V) ● RDS(ON) ＜ 7.5 Ω (VGS = 5V) ● Low Input Capacitance ● Fast Switching Speed ● Low On-Resistance MOSFET 1.S2 4.S1 2.G2 5.G1 3.D1 6.D2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage @ RGS ≤ 1MΩ Gate-Source Voltage Continuous Pulsed Continuous Continuous Drain Current Continuous @ 100°C Pulsed Power Dissipation Derating above Ta = 25°C Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VDG VGS ID PD RthJA TJ Tstg Rating 60 60 ±20 ±40 115 73 800 200 1.6 625 150 -55 to 150 Unit V mA mW mW/℃ ℃/W ℃ www.kexin.com.