2N700 Datasheet | Specifications & PDF Download

TSM2N7000 60V N-Channel MOSFET SOT-92 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS = 10V ID (mA) 500 Fe

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WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: *Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Th

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2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

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2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage cont

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2N7000CSM MECHANICAL DATA Dimensions in mm (inches) 2.54 ± 0.13 (0.10 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 0.51 ± 0.10 (0.02 ± 0.004) 3 0.31 (0.012

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kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhan

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2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier ap

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N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are

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Description JMTL2N7002K JMT N-channel MOSFET Features Application  VDS=60V, ID=0.3A  Battery Operated Systems RDS(ON) <2.8Ω @ VGS = 10V  Di

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2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capaci

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DATA SHEET www.onsemi.com MOSFET – Small Signal, N-Channel, Single 60 V, 340 mA, SC−70 2N7002W, 2V7002W Features  ESD Protected  Low RDS(on)  S

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N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • High density cell design fo

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N-Channel MOSFET ESD Protected 2000V Transistor 2N7000K N-Channel MOSFET ESD Protected 2000V Transistor Features • ESD protected 2000V • High densi

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage co

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Not Recommended for New 2N7002V/VA Design, Use 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET

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N-Channel Small Signal MOSFET FEATURES Lower RDS(on) Improved Inductive Ruggedness Fast Switching Times Lower Input Capacitance Extended Saf

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2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancem

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2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected

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