2N700 Datasheet | Specifications & PDF Download

2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled

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2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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NIKO-SEM N-Channel Logic Level Enhancement PZ2N7002M Mode Field Effect Transistor SOT-23(S) Halogen-Free & Lead-Free Drain PRODUCT SUMMARY V(BR

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NIKO-SEM N-Channel Logic Level Enhancement PZ2N7002Y Mode Field Effect Transistor SOT-323 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS

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2N7002DW Dual N-Channel MOSFET 3 2 1 6 5 4 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low T

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2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhan

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M

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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi

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L2N7002KWT1G S-L2N7002KWT1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-70 1. FEATURES ● We declare that the material of product compliance

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–88 • Pb−Free Package is Available. L2N7002DW1T1G/T3G MAXIMUM RATIN

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Description JMTL2N7002KS JMT N-channel MOSFET Features Application  VDS=60V, ID=0.25A  Battery Operated Systems RDS(ON) <2.2Ω @ VGS = 10V 

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DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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L2N7002KDW1T1G S-L2N7002KDW1T1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product complia

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002KLT1G 380 mAmps, 60 Volts N–Channel SOT–23 S-L2N7002KLT1G ●FEATURES 1)ESD Protected 2)Low RD

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–723 • Pb−Free Package is Available. • S- Prefix for Automotive and

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2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

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ME2N7002F1KW/ME2N7002F1KW -G Dual N-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1KW is the Dual N-Channel logic enhance

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N-Channel MOSFET – ESD Protected GENERAL DESCRIPTION The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced

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G2N7002 Description Package Dimensions 1/3 N-CHANNEL TRANSISTOR N-channel enhancement-mode MOS TRANSISTOR REF. A B C D E F Millimeter Min. Max. 2.

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