PED705 - P-Channel Enhancement Mode Power MOSFET

semi one

Description

The PED705 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = -12V,ID = -8A RDS(ON).

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PED705 p-channel enhancement mode power mosfet by semi one - Datasheet Preview

Datasheet Details

Part number	PED705
Manufacturer	semi one
File Size	1.33 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PED705 Datasheet

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Full PDF Text Transcription

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PED705 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED705 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications Bottom Drain Contact D1 6D D2 5D GENERAL FEATURES ● VDS = -12V,ID = -8A RDS(ON) <30mΩ @ VGS=-4.5V RDS(ON) <40mΩ @ VGS=-2.5V RDS(ON) <60mΩ @ VGS=-1.

Published: Dec 3, 2018 |