PMV28UNEA Datasheet PDF (N-channel MOSFET) | Download nexperia PMV28UNEA

PMV28UNEA - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Low threshold voltage.
Very fast switching.
Trench MOSFET technology.
ElectroStatic Discharge (ESD) protection > 2 kV HBM.
AEC-Q101 qualified 3.

Datasheet Details

Part number	PMV28UNEA
Manufacturer	nexperia
File Size	736.13 KB
Description	N-channel MOSFET
Datasheet	PMV28UNEA Datasheet
Additional preview pages of the PMV28UNEA datasheet.

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Full PDF Text Transcription

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PMV28UNEA 20 V, N-channel Trench MOSFET 10 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.

Published: Jul 28, 2019 |