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PMV213SN - N-channel FET

Datasheet Summary

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology.

2.

Features

  • Low on-state resistance in a small surface mount package 3.

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Datasheet Details

Part number PMV213SN
Manufacturer nexperia
File Size 258.79 KB
Description N-channel FET
Datasheet download datasheet PMV213SN Datasheet
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Full PDF Text Transcription

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PMV213SN N-channel TrenchMOS standard level FET 23 November 2020 Product data sheet 1. General description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 2. Features and benefits • Low on-state resistance in a small surface mount package 3. Applications • DC-to-DC primary side switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current RDSon drain-source on-state resistance Ptot total power dissipation Conditions 25 °C < Tj < 150 °C Tj = 25 °C VGS = 10 V; Tsp = 25 °C VGS = 10 V; ID = 0.5 A; Tj = 25 °C Tsp = 25 °C Min Typ Max Unit - - 100 V -30 - 30 V - - 1.
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