Datasheet4U Logo Datasheet4U.com

PMPB55ENEA - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Tin-plated 100 % solderable side pads for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 2 kV.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMPB10XNE single N-channel Trench MOSFET NXP
PMPB11EN 30V N-channel Trench MOSFET NXP
PMPB12UN 20V single N-channel Trench MOSFET NXP Semiconductors
PMPB13XNE single N-channel Trench MOSFET NXP
PMPB15XN single N-channel Trench MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
PMPB50ENE N-channel MOSFET
PMPB06R3XN 30V N-channel Trench MOSFET
PMPB06R7VP 12V P-channel Trench MOSFET
PMPB07R6XN 30V N-channel Trench MOSFET
PMPB100ENE N-channel MOSFET

Full PDF Text Transcription

Click to expand full text
PMPB55ENEA 60 V, N-channel Trench MOSFET 6 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Tin-plated 100 % solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.
Published: |