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PMDPB58UPE
20 V dual P-channel Trench MOSFET
3 February 2016
Product data sheet
1. General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Very fast switching • Trench MOSFET technology • 2 kV ElectroStatic Discharge (ESD) protection
3. Applications
• Relay driver • High-speed line driver • High-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = -4.
PMDPB58UPE Datasheet
