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PMDPB70XPE
20 V dual P-channel Trench MOSFET
Rev. 1 — 20 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Trench MOSFET technology
2 kV ElectroStatic Discharge (ESD) protection
1.3 Applications
Relay driver High-speed line driver
High-side load switch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics (per transistor)
Tj = 25 °C VGS = -4.
PMDPB70XPE Datasheet
