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PMDPB58UPE
020 -6
20 V dual P-channel Trench MOSFET
Rev. 1 — 19 June 2012 Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
DF
N2
1.2 Features and benefits
Low threshold voltage Very fast switching Trench MOSFET technology 2 kV ElectroStatic Discharge (ESD) protection
1.3 Applications
Relay driver High-speed line driver High-side load switch Switching circuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.
PMDPB58UPE Datasheet
