Click to expand full text
PHPT61006NY
100 V, 6 A NPN high power bipolar transistor
26 January 2015
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT61006PY
2. Features and benefits
• High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation • AEC-Q101 qualified.
3. Applications
• Power management • Load switch • Linear mode voltage regulator • Backlighting applications • Motor drive • Relay replacement
4. Quick reference data
Table 1.
PHPT61006NY Datasheet
