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PHPT610035NK - NPN/NPN high power double bipolar transistor

Description

NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) SurfaceMounted Device (SMD) power plastic package.

Matched version of PHPT610030NK.

PNP/PNP complement: PHPT610035PK.

Features

  • Current gain matching 5% High thermal power dissipation capability Suitable for high temperature.

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Full PDF Text Transcription

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LFP AK 56 PHPT610035NK 14 October 2014 D NPN/NPN high power double bipolar transistor Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK. NPN/PNP complement: PHPT610035NPK. 2. Features and benefits • • • • • • Current gain matching 5% High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3.
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